14 July 2000 Photoluminescence in Ga0.85In0.15As0.99N0.01/GaAs single quantum wells: effect of low-temperature heat treatment in N2
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Proceedings Volume 3944, Physics and Simulation of Optoelectronic Devices VIII; (2000) https://doi.org/10.1117/12.391403
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
Abstract
We present the results of our studies concerning temperature dependence of photoluminescence (PL) in GaxIn1-xAs1- yNy/GaAs single quantum wells. Our results at low temperatures indicate the presence of a high density of compositional and/or structural disorder and hence poor PL efficiency, common to as-grown GaInAsN material. We show, however, that the optical quality of GaInAsN can be improved while achieving a red shift in the spectra. This is unlike the results obtained by rapid thermal annealing (RTA) or conventional annealing, which are widely employed as post- growth treatment techniques, where any increase in the PL intensity is almost always accompanied by an undesired blue- shift.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Richard J. Potter, Richard J. Potter, Naci Balkan, Naci Balkan, Michael J. Adams, Michael J. Adams, Paul R. Chalker, Paul R. Chalker, Tim B. Joyce, Tim B. Joyce, Tim J. Bullough, Tim J. Bullough, } "Photoluminescence in Ga0.85In0.15As0.99N0.01/GaAs single quantum wells: effect of low-temperature heat treatment in N2", Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); doi: 10.1117/12.391403; https://doi.org/10.1117/12.391403
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