14 July 2000 Recent advances in type-II interband cascade lasers
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Proceedings Volume 3944, Physics and Simulation of Optoelectronic Devices VIII; (2000) https://doi.org/10.1117/12.391437
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
Abstract
Interband cascade (IC) lasers are a new class of mid-IR light sources, which take advantage of the broken-gap alignment in type-II quantum wells to reuse electrons for sequential photon emissions from serially connected active regions. Here, we describe recent advances in InAs/GaInSb type-II IC lasers at emission wavelengths of 3.6 - 4 micrometer; these semiconductor lasers have exhibited significantly higher differential quantum efficiencies and peak powers than previously reported. Low threshold current densities (e.g., approximately 56 A/cm2 at 80 K) and power efficiency exceeding 9% were observed from a mesa-stripe laser in cw operation. Also, these lasers were able to operate at temperatures up to 250 K in pulsed mode and to 120 K in cw mode. We observed from several devices at temperatures above 80 K a slope efficiency of approximately 800 mW/A per facet, corresponding to a differential external quantum efficiency of approximately 500%. Peak optical output powers exceeding 4 W per facet were observed from several type-II IC laser at 80 K.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rui Q. Yang, John L. Bradshaw, John D. Bruno, John T. Pham, and Donald E. Wortman "Recent advances in type-II interband cascade lasers", Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); doi: 10.1117/12.391437; https://doi.org/10.1117/12.391437
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