14 July 2000 Theoretical analysis of AlGaAs/GaAs quantum well waveguide defined by impurity-free vacancy diffusion
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Proceedings Volume 3944, Physics and Simulation of Optoelectronic Devices VIII; (2000) https://doi.org/10.1117/12.391414
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
Abstract
The AlGaAs/GaAs multi-quantum well waveguide defined by impurity free vacancy diffusion is analyzed using an advanced model. The waveguiding properties such as the modal propagation constant, full width half maximum of the guided field profile are found by the semi-vectorial wave equation. By choosing various parameters like the cap width, the cap thickness, the quantum well thickness and the operating wavelength properly, single-mode operation with strong optical confinement can be achieved. This method of defining guided channels is attractive in the view of integrating photonic devices with a tuneable wavelength operation.
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Dennis H. W. Lau, Dennis H. W. Lau, Joseph Micallef, Joseph Micallef, } "Theoretical analysis of AlGaAs/GaAs quantum well waveguide defined by impurity-free vacancy diffusion", Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); doi: 10.1117/12.391414; https://doi.org/10.1117/12.391414
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