14 July 2000 Theoretical studies of AlGaAs-GaAs multiple-quantum-well single-channel waveguide defined by ion-implantation-induced intermixing
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Proceedings Volume 3944, Physics and Simulation of Optoelectronic Devices VIII; (2000) https://doi.org/10.1117/12.391415
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
Abstract
A simple and accurate model is presented for the analysis of ion-implanted AlGaAs-GaAs multiple-quantum-well (MQW) single channel waveguide. Our model proposed that the interdiffusion is vacancy enhanced. So we simulate the interdiffusion mechanism by solving the coupled diffusion equation of vacancy and interdiffusion numerically. The modal propagation constants full width half-maximum (FWHM) and field profiles of the guided modes of the waveguide are solved numerically using a semi-vectorial wave equation. MQW optical waveguides defined by ion-implantation-induced intermixing are shown to have similar optical properties as conventional dielectric rib optical waveguide. They also provide a more flexible control over the waveguiding characteristics by changing parameters such as periods of MQW layers, mask width, ion implant energy, and diffusion time.
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Hon Fai Chu, Hon Fai Chu, Wai-Chee Shui, Wai-Chee Shui, } "Theoretical studies of AlGaAs-GaAs multiple-quantum-well single-channel waveguide defined by ion-implantation-induced intermixing", Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); doi: 10.1117/12.391415; https://doi.org/10.1117/12.391415
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