Time-resolved visualization of electron flow in semiconductor quantum confined structures using carrier drag effect

Yasushi Nagamune

doi:10.1117/12.391453

14 July 2000 Time-resolved visualization of electron flow in semiconductor quantum confined structures using carrier drag effect

Yasushi Nagamune

Author Affiliations +

Proceedings Volume 3944, Physics and Simulation of Optoelectronic Devices VIII; (2000) https://doi.org/10.1117/12.391453
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

This work describes a new technique to visualize the electron flow in semiconductor quantum structures using carrier drag effect. The visualization method is based on ultra-short laser pulse excitation and time-resolved micro-photoluminescence measurements at low temperatures. Here, time-integrated and time-resolved images corresponding to the electron flow in modulation-doped n-type GaAs/AlGaAs quantum wells and edge- wires are demonstrated. It is found that the relaxation time of exciton-electron scattering and exciton-lattice scattering are very long and that the relaxation time in the edge-wires are longer than those in the wells, resulting in high exciton mobility in the edge wires.

Citation Download Citation

Yasushi Nagamune "Time-resolved visualization of electron flow in semiconductor quantum confined structures using carrier drag effect", Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); https://doi.org/10.1117/12.391453

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