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14 July 2000 Ultralow-threshold-current-density quantum dot lasers using the dots-in-a-well (DWELL) structure
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Proceedings Volume 3944, Physics and Simulation of Optoelectronic Devices VIII; (2000)
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
Quantum dots laser diodes using the dots-in-a-well (DWELL) structure (InAs dots in an InGaAs quantum wells) have exhibited significant recent progress. With a single InAs dot layer in In0.15Ga0.85As quantum well, threshold current densities are as low as 26 A cm-2 at 1.25 micrometer. Quantum dot laser threshold current densities are now lower than any other reported semiconductor laser. In this work, the threshold current density is reduced to 16 A cm-2 by HR coatings on the same device. Further investigation of performance reveals that use of multiple DWELL stacks improves the modal gain and internal quantum efficiency. It is suggested that carrier heating out of the quantum dots limits the TO value of these DWELL lasers.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Guangtian T. Liu, Andreas Stintz, Hua Li, Luke F. Lester, and Kevin J. Malloy "Ultralow-threshold-current-density quantum dot lasers using the dots-in-a-well (DWELL) structure", Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000);

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