Al-free 950-nm BA diode lasers with high efficiency and reliability at 50 degrees C ambient temperature

Goetz Erbert; Gerhard Beister; Arne Knauer; Juergen Maege; Wolfgang Pittroff; Peter Ressel; Juergen Sebastian; R. Staske; Hans Wenzel; Marcus Weyers; Guenther Traenkle

doi:10.1117/12.380547

29 March 2000 Al-free 950-nm BA diode lasers with high efficiency and reliability at 50° C ambient temperature

Goetz Erbert, Gerhard Beister, Arne Knauer, Juergen Maege, Wolfgang Pittroff, Peter Ressel, Juergen Sebastian, R. Staske, Hans Wenzel, Marcus Weyers, Guenther Traenkle

Author Affiliations +

Proceedings Volume 3945, Laser Diodes and LEDs in Industrial, Measurement, Imaging, and Sensors Applications II; Testing, Packaging, and Reliability of Semiconductor Lasers V; (2000) https://doi.org/10.1117/12.380547
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

We report device properties and results of lifetime tests for Al-free InGaAs/InGaAsP/InGaP broad-area (BA) laser diodes, emitting at 950 nm. The epitaxial layers were grown by metal organic vapor phase epitaxy (MOVPE). The mounted diode lasers have a high wallplug efficiency around 60%, for a resonator length of 2 mm, and about 50% for 4 mm long devices due to low threshold current densities of j_th equals 110 . . . 140 A/cm², high slope efficiencies of 75% and the typical low series resistance of the Al-free material. The lasers were mounted on copper heatsinks, episide-down as well as episide- up. Lifetime tests were performed with a facet load of 15 mW/micrometers at temperatures between 25 degrees Celsius and 70 degrees Celsius and with a facet load of 20 mW/micrometers at 25 degrees Celsius. All diodes survived 3000 h with degradation rates lower than 6 X 10^-5h^-1 at 50 degrees Celsius and 1 X 10^-4h^-1 at 70 degrees Celsius as well as 2000 h with a low degradation rates of 2 X 10^-5h^-1 at 20 mW/micrometer. As far we know, the results belong to the best ones reported until now for Al-free BA laser diodes.

Citation Download Citation

Goetz Erbert, Gerhard Beister, Arne Knauer, Juergen Maege, Wolfgang Pittroff, Peter Ressel, Juergen Sebastian, R. Staske, Hans Wenzel, Marcus Weyers, and Guenther Traenkle "Al-free 950-nm BA diode lasers with high efficiency and reliability at 50° C ambient temperature", Proc. SPIE 3945, Laser Diodes and LEDs in Industrial, Measurement, Imaging, and Sensors Applications II; Testing, Packaging, and Reliability of Semiconductor Lasers V, (29 March 2000); https://doi.org/10.1117/12.380547

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