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29 March 2000 High-performance GaInP/AlGaInP visible laser diodes grown by multiwafer MOCVD
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Abstract
The characteristics of different confined structures of AlGaInP/GaInP laser diodes grown by low-pressure multi-wafer metal-organic chemical vapor deposition have been discussed in this work. The constraint effect on the light and carriers in confining layers has been analyzed as well. To enhance the efficiency, the relatively low refractive index of AlInP was adopted as the cladding layer, in which the doping level of p- cladding layer was over 1 X 1018 cm-3. Meanwhile, the GRIN-SCH structures were applied as confining layers to achieve optimum constraints of light and carriers. The threshold current was measured at 10.6 mA from the laser diodes emitting at (lambda) equals 652 nm with resonant cavity of 3.5 micrometer X 300 micrometer and 16.8 mA from the laser diodes emitting at (lambda) equals 639 nm with resonant cavity of 3.5 micrometer X 300 micrometer.
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Hir Ming Shieh, Richard J. Fu, Ting-Chan Lu, and Lih-Ren Chen "High-performance GaInP/AlGaInP visible laser diodes grown by multiwafer MOCVD", Proc. SPIE 3945, Laser Diodes and LEDs in Industrial, Measurement, Imaging, and Sensors Applications II; Testing, Packaging, and Reliability of Semiconductor Lasers V, (29 March 2000); https://doi.org/10.1117/12.380553
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