29 March 2000 Raman probe of new laser materials GaAs1-xBixand InAs1-xBix
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Abstract
Inclusion of a small amount of Bi in InAs and GaAs changes the temperature dependent behavior of the band gap. Both InAs1- xBix and GaAs1-xBix tend to have temperature insensitive band gap with increasing Bi content. Raman scattering has been performed on the epilayers of InAs1- xBix and GaAs1-xBix compounds grown by MOVPE technique for varying Bi content. Good single crystalline growth with spatial homogeneity was confirmed using micro- Raman technique. Vibrational modes of InBi and GaBi were observed in the two materials, respectively. In addition, vibrational modes corresponding to Bi and phonon-plasmon coupled modes were also observed. Experimental results indicate that Bi atoms homogeneously replace some of the As atoms in both InAs as well as in GaAs to provide good crystalline structures of InAs1-xBix and GaAs1- xBix compounds, respectively.
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Prabhat Verma, Prabhat Verma, Martin Herms, Martin Herms, Gert Irmer, Gert Irmer, Masayoshi Yamada, Masayoshi Yamada, Hiroshi Okamoto, Hiroshi Okamoto, Kunishige Oe, Kunishige Oe, } "Raman probe of new laser materials GaAs1-xBixand InAs1-xBix", Proc. SPIE 3945, Laser Diodes and LEDs in Industrial, Measurement, Imaging, and Sensors Applications II; Testing, Packaging, and Reliability of Semiconductor Lasers V, (29 March 2000); doi: 10.1117/12.380534; https://doi.org/10.1117/12.380534
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