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1 May 2000 Comparison of fabrication approaches for selectively oxidized VCSEL arrays
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Proceedings Volume 3946, Vertical-Cavity Surface-Emitting Lasers IV; (2000) https://doi.org/10.1117/12.384385
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
Abstract
The impressive performance improvements of laterally oxidized VCSELs come at the expense of increased fabrication complexity for 2-dimensional arrays. Since the epitaxial layers to be wet-thermally oxidized must be exposed, non-planarity can be an issue. This is particularly important in that electrical contact to both the anode and cathode of the diode must be brought out to a package. We have investigated four fabrication sequences suitable for the fabrication of 2- dimensional VCSEL arrays. These techniques include: mesa etched polymer planarized, mesa etched bridge contacted, mesa etched oxide isolated (where the electrical trace is isolated from the substrate during the oxidation) and oxide/implant isolation (oxidation through small via holes) all of which result in VCSELs with outstanding performance. The suitability of these processes for manufacturing are assessed relative to oxidation uniformity, device capacitance, and structural ruggedness for packaging.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kent M. Geib, Kent D. Choquette, Andrew A. Allerman, Ronald D. Briggs, and Jana Jo Hindi "Comparison of fabrication approaches for selectively oxidized VCSEL arrays", Proc. SPIE 3946, Vertical-Cavity Surface-Emitting Lasers IV, (1 May 2000); https://doi.org/10.1117/12.384385
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