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1 May 2000 High-speed visible VCSEL for POF data links
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Proceedings Volume 3946, Vertical-Cavity Surface-Emitting Lasers IV; (2000) https://doi.org/10.1117/12.384364
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
Abstract
We report on two AlGaInP-based visible VCSEL designs based on different current confinement schemes, ion implantation and selective oxidation, and we compare the respective performances with a particular interest on the modulation properties. The implanted device operated continuous wave (CW) up to 40 degrees Celsius. Threshold current of 7 mA, threshold voltage of 2.5 V and maximum optical power of 0.3 mW were measured at room temperature. The small signal modulation responses were fitted using a 3-poles model, allowing the estimation of various parameters such as resonance frequency, damping factor and parasitic cut-off. The maximum 3dB- bandwidth was shown to be 2.1 GHz, limited both by thermal and parasitic effects. 'Error-free' transmission at 1 Gb/s was demonstrated through 50-meter of graded-index POF. The selectivity oxidized devices achieve much higher output power (1.8 mW for the 10 micrometer opening diameter) with threshold current as low a 1.5 mA and threshold voltage of 2.1 V at room temperature, and operate CW up to 49 degrees Celsius. The maximum 3 dB-bandwidth was 4.5 GHz. Modulation current efficiency factor up to 2.8 GHz/(root)[mA] was measured.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Renaud Stevens, Anita Risberg, Richard Schatz, Rickard M. von Wuertemberg, Bertil Kronlund, Marco Ghisoni, and Klaus P. Streubel "High-speed visible VCSEL for POF data links", Proc. SPIE 3946, Vertical-Cavity Surface-Emitting Lasers IV, (1 May 2000); https://doi.org/10.1117/12.384364
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