1 May 2000 In-situ atomic absorption monitoring with substrate reflection
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Proceedings Volume 3946, Vertical-Cavity Surface-Emitting Lasers IV; (2000) https://doi.org/10.1117/12.384386
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
We demonstrate a technique to apply real-time optical flux monitoring by in situ atomic absorption when the only available optical path through a molecular beam epitaxial growth chamber reflects from the substrate. Thin-film interference effects in the reflected signal were virtually eliminated during growth by using a collinear beam that has a wavelength very close to that of the group-III absorption line. This method enables atomic absorption monitoring to be applied to heterostructure growths without the need for real- time reflectance analysis. We demonstrated the technique by monitoring Ga flux during GaAs growth using a Mn lamp for the off-resonance source. The short-term uncertainty in the flux measurement was 0.6% (one standard deviation). Theoretical calculations indicated that approximately 0.2% and 0.3% maximum instantaneous error can be attained for Ga and Al, respectively, during the growth of vertical cavity surface emitting layers.
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Scott P. Hays, Robert K. Hickernell, Kristine A. Bertness, "In-situ atomic absorption monitoring with substrate reflection", Proc. SPIE 3946, Vertical-Cavity Surface-Emitting Lasers IV, (1 May 2000); doi: 10.1117/12.384386; https://doi.org/10.1117/12.384386

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