AlGaInN-based laser diodes

Shiro Uchida; Satoru Kijima; Tsuyoshi Tojyo; Shinichi Ansai; Motonubu Takeya; Tomonori Hino; Katsuyoshi Shibuya; Shinroh Ikeda; Takeharu Asano; Katsunori Yanashima; Shigeki Hashimoto; Tsunenori Asatsuma; Masafumi Ozawa; Toshimasa Kobayashi; Yoshifumi Yabuki; Tsuneyoshi Aoki; Masao Ikeda

doi:10.1117/12.382094

18 April 2000 AlGaInN-based laser diodes

Shiro Uchida, Satoru Kijima, Tsuyoshi Tojyo, Shinichi Ansai, Motonubu Takeya, Tomonori Hino, Katsuyoshi Shibuya, Shinroh Ikeda, Takeharu Asano, Katsunori Yanashima, Shigeki Hashimoto, Tsunenori Asatsuma, Masafumi Ozawa, Toshimasa Kobayashi, Yoshifumi Yabuki, Tsuneyoshi Aoki, Masao Ikeda

Author Affiliations +

Proceedings Volume 3947, In-Plane Semiconductor Lasers IV; (2000) https://doi.org/10.1117/12.382094
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

The longer lifetime is desired for high power AlGaInN based violet lasers. We found that lifetime is strongly dependent on both the initial operating consumption power and the dislocation densities in the laser stripe. Pd/Pt/Au as a metal and AlGaN/GaN superlattice as a p-type cladding layer were incorporated to reduce the operating voltage. The optimization of device parameters as well as the stripe width and the RIE etching device depth led to the lower threshold current of 3.4 kA/cm². We used the Pendeo epitaxy technique to get lower dislocation density approximately 10⁷ cm^-2. The LDs with these technologies showed an output power as high as 35 mW under room temperature CW condition without kink. The lifetime is more than 500 hours under CW operation with a constant power of 20 mW at 25 degree(s)C.

Citation Download Citation

Shiro Uchida, Satoru Kijima, Tsuyoshi Tojyo, Shinichi Ansai, Motonubu Takeya, Tomonori Hino, Katsuyoshi Shibuya, Shinroh Ikeda, Takeharu Asano, Katsunori Yanashima, Shigeki Hashimoto, Tsunenori Asatsuma, Masafumi Ozawa, Toshimasa Kobayashi, Yoshifumi Yabuki, Tsuneyoshi Aoki, and Masao Ikeda "AlGaInN-based laser diodes", Proc. SPIE 3947, In-Plane Semiconductor Lasers IV, (18 April 2000); https://doi.org/10.1117/12.382094

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