18 April 2000 High-efficiency low-vertical-divergence-angle 980-nm Al-free active region lasers with novel large optical cavity and asymmetrical cladding layers
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Proceedings Volume 3947, In-Plane Semiconductor Lasers IV; (2000); doi: 10.1117/12.382108
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
Abstract
980 nm InGaAs/InGaAsP/AlGaAs strained quantum well lasers with novel large optical cavity and asymmetrical claddings was fabricated by MOCVD. Very high differential quantum efficiency of 90% (1.15 W/A) and low vertical divergence angle of 24 degree(s) at long cavity length were obtained for 100 micrometers stripe lasers. The differential quantum efficiency is up to 94% (1.20) at cavity length of 500 micrometers .
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ZunTu Xu, Jing-Ming Zhang, Xiaoyu Ma, Guowen Yang, Guangdi Shen, Lianhui Chen, "High-efficiency low-vertical-divergence-angle 980-nm Al-free active region lasers with novel large optical cavity and asymmetrical cladding layers", Proc. SPIE 3947, In-Plane Semiconductor Lasers IV, (18 April 2000); doi: 10.1117/12.382108; https://doi.org/10.1117/12.382108
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KEYWORDS
Quantum efficiency

Semiconductor lasers

Optical resonators

Cladding

Fiber lasers

Quantum wells

Waveguides

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