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18 April 2000 High-power AlGaInAs/GaAs microstack laser bars
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Proceedings Volume 3947, In-Plane Semiconductor Lasers IV; (2000) https://doi.org/10.1117/12.382106
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
Abstract
The maximum useful optical power of laser bars is limited due to thermal and lifetime constraints to typical values of 50 W/cm cw or 120 W/cm qcw. A promising new approach is the so-called microstack laser in which several laseractive areas are integrated vertically in the same monolithic structure. In order to drive these structures in series with high efficiency low-resistance tunnel-junctions have to be realized. By optimizing the MOVPE growth process tunnel- junctions with a specific differential resistivity of 2.5 X 10-4 (Omega) cm2 could be obtained, which are suitable for the monolithic inter-connection of laser structures.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christian Hanke, Lutz Korte, Bruno D. Acklin, Martin Behringer, Gerhard Herrmann, Johann Luft, B. De Odorico, Marcel Marchiano, and Jens Wilhelmi "High-power AlGaInAs/GaAs microstack laser bars", Proc. SPIE 3947, In-Plane Semiconductor Lasers IV, (18 April 2000); https://doi.org/10.1117/12.382106
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