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18 April 2000 High-power highly reliable Al-free active region laser diodes in the 785- to 830-nm region
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Proceedings Volume 3947, In-Plane Semiconductor Lasers IV; (2000) https://doi.org/10.1117/12.382091
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
Abstract
Use of aluminum-free epitaxial structures for near-infrared laser diodes has been an active research area in the past decade. These edge-emitting laser diodes have demonstrated operational lifetimes exceeding 10,000 hours at high output powers and high efficiencies. Improvements in epitaxial structure, processing, and packaging have enabled these results. In this paper, we will review developments in aluminum-free laser diodes. We describe our recent work with these devices and conclude by discussing reliability issues.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John L. Nightingale, Michael J. Finander, Rashit F. Nabiev, Tiina E. Kuuslahti, Jukka Koengaes, and Arto K. Salokatve "High-power highly reliable Al-free active region laser diodes in the 785- to 830-nm region", Proc. SPIE 3947, In-Plane Semiconductor Lasers IV, (18 April 2000); https://doi.org/10.1117/12.382091
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