18 April 2000 High-power mid-infrared lasers based on type-II heterostructures with asymmetric band offset confinement
Author Affiliations +
Proceedings Volume 3947, In-Plane Semiconductor Lasers IV; (2000) https://doi.org/10.1117/12.382093
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
Abstract
We have proposed a new physical approach to design mid-IR lasers based on type II heterostructures with strong asymmetric band offset confinement at the interface. It allows to create the high barriers for carriers and to reduce leakage current from an active region, that leads to increase the quantum efficiency of the emission due to the strong accumulation of recombining carriers. Here this approach was successfully used for fabrication high power lasers operating at (lambda) equals 3.26 micrometers . The laser structure containing narrow-gap active InGaAsEb (Eg equals 0.380 eV) layer and wide-gap confined InAsSbP (Eg equals 0.520 eV) and GaInAsSb (Eg equals 0.640 eV) layers lattice-matched to InAs substrate was grown by LPE. Such heterostructure has the band energy diagram with strong asymmetric band offsets and allows to provide high barriers for electrons at the InGaAsSb/GaInAsSb heterointerface ((Delta) Ec equals 0.60 eV) and for holes at the InGaAsSb/InAsSbP one ((Delta) Ev equals 0.15 eV). Maximum output power of 1.5 W was achieved in pulsed mode with pulse duration 1 microsecond(s) and repetition rate 100 Hz for 100 micrometers broad area laser with cavity length about of 1000 micrometers . Threshold current density was about 450 A/cm2. Characteristic temperature T0 equals 47 K was observed in the range of 77 - 140 K.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yury P. Yakovlev, Konstantin D. Moiseev, Maya P. Mikhailova, Andrei M. Monakhov, Anastasia Astakhova, Victor V. Sherstnev, "High-power mid-infrared lasers based on type-II heterostructures with asymmetric band offset confinement", Proc. SPIE 3947, In-Plane Semiconductor Lasers IV, (18 April 2000); doi: 10.1117/12.382093; https://doi.org/10.1117/12.382093
PROCEEDINGS
10 PAGES


SHARE
RELATED CONTENT

Type-II mid-infrared lasers
Proceedings of SPIE (April 18 2000)
808 nm Al free InGaAsP GaAs SCH SQW lasers fabricated...
Proceedings of SPIE (August 19 1998)
High power InAsSb InAsSbP laser diodes emitting at 3 ...
Proceedings of SPIE (January 23 1997)
Recent progress in lead-salt lasers
Proceedings of SPIE (April 12 1996)

Back to Top