18 April 2000 High-power optically pumped type-II QW lasers grown on GaAs compliant substrate
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Proceedings Volume 3947, In-Plane Semiconductor Lasers IV; (2000) https://doi.org/10.1117/12.382092
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
Abstract
The first demonstration of an epi-down mounted type-II optically pumped (OP) mid-infrared (IR) laser grown on an InGaAs-GaAs bonded substrate is reported. The device consisted of 60 periods of InAs/InGaSb/InAs/AlSb quantum wells, and was mounted epi-side down on a Cu heat sink. The InGaAs-GaAs bonded substrate allowed the device to be pumped from the substrate side of the laser with a 980 nm diode laser array. The laser emitted at 4.6-micrometers at 80 K, and peak power output was 300-mW per (uncoated) facet for 10 microsecond(s) pulses, and 200-mW per facet for 500-microsecond(s) pulse duration, 500-Hz-repetition rate. For comparison, a low- filled-factor mid-IR OP laser grown on a GaSb substrate was also studied. This device ((lambda) equals 3.67 micrometers ) showed improved external quantum efficiency (approximately 26%) compared with previously type-II OP lasers, and high peak output power (> 0.45 W per facet 500-microsecond(s) pulse).
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Stefan J. Murry, Jun Zheng, Chau-Hong Kuo, C.H. Thompson Lin, Han Q. Le, Shin Shem Pei, "High-power optically pumped type-II QW lasers grown on GaAs compliant substrate", Proc. SPIE 3947, In-Plane Semiconductor Lasers IV, (18 April 2000); doi: 10.1117/12.382092; https://doi.org/10.1117/12.382092
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