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18 April 2000 Highly efficient reliable lasers for 830-nm wavelength range
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Proceedings Volume 3947, In-Plane Semiconductor Lasers IV; (2000) https://doi.org/10.1117/12.382101
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
Abstract
This paper focuses on the laser diode performance. The devices of interest operate in the spectral range of 800 nm to 915 nm. Some fabrication aspects of highly efficient laser diodes are drawn. Brief comparison of two major material systems is presented.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexander Ovtchinnikov, Xiaoguang He, Manoj Kanskar, Jeff Mott, Sheng-Hui Yang, R. Supe, K. Thibault, and Rushikesh M. Patel "Highly efficient reliable lasers for 830-nm wavelength range", Proc. SPIE 3947, In-Plane Semiconductor Lasers IV, (18 April 2000); https://doi.org/10.1117/12.382101
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