18 April 2000 Interband cascade lasers
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Proceedings Volume 3947, In-Plane Semiconductor Lasers IV; (2000) https://doi.org/10.1117/12.382089
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
We report the recent progress of interband cascade (IC) lasers based on InAs/Ga(In)Sb/AlSb type-II quantum wells. For the 4.5-micrometers IC lasers, the internal loss was 11.6 cm-1 and the internal quantum efficiency was 460% at 90 K. When mounted epi-side down on diamond, cw operation was observed with an external quantum efficiency (EQE) of 193%, a cw output power over 500 mW, and a threshold current density as low as 35 A/cm2 at 80 K. Dual-wavelength IC laser was also demonstrated. The device lased simultaneously at 4.482 and 4.568 micrometers . At 110 K, a peak output power of 150 mW per facet was achieved with 5-microsecond(s) pulses at 1-KHz repetition rate. The threshold current density, average EQE, and peak output power of a 0.4-mm long device were 119 A/cm2, 278%, and 150 mW per facet, respectively.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C.H. Thompson Lin, C.H. Thompson Lin, WenYen Hwang, WenYen Hwang, Han Q. Le, Han Q. Le, Yao-Ming Mu, Yao-Ming Mu, A. Liu, A. Liu, Jun Zheng, Jun Zheng, A. M. Delaney, A. M. Delaney, Chau-Hong Kuo, Chau-Hong Kuo, Shin Shem Pei, Shin Shem Pei, } "Interband cascade lasers", Proc. SPIE 3947, In-Plane Semiconductor Lasers IV, (18 April 2000); doi: 10.1117/12.382089; https://doi.org/10.1117/12.382089


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