Mid-IR type-II InAs/GaInSb interband cascade lasers

John L. Bradshaw; Rui Q. Yang; John D. Bruno; John T. Pham; Donald E. Wortman

doi:10.1117/12.382090

18 April 2000 Mid-IR type-II InAs/GaInSb interband cascade lasers

John L. Bradshaw, Rui Q. Yang, John D. Bruno, John T. Pham, Donald E. Wortman

Proceedings Volume 3947, In-Plane Semiconductor Lasers IV; (2000) https://doi.org/10.1117/12.382090
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

We report our progress to date in the development of type-II interband cascade lasers emitting in the mid-IR (3.8-to-4.0 micrometers ) spectral region. We have demonstrated significant improvements over previously reported results in terms of differential external quantum efficiency (approximately 500%), peak power (>4 W/facet), peak power conversion efficiency (approximately 7%), maximum operating temperature (217 K), and continuous-wave (cw) operation. We briefly review some results for pulsed excitation and then present more detailed operating characteristics for the cw performance of our lasers, including the output power characteristics and the dependence of the output spectrum on current.

Citation Download Citation

John L. Bradshaw, Rui Q. Yang, John D. Bruno, John T. Pham, and Donald E. Wortman "Mid-IR type-II InAs/GaInSb interband cascade lasers", Proc. SPIE 3947, In-Plane Semiconductor Lasers IV, (18 April 2000); https://doi.org/10.1117/12.382090

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