Paper
18 April 2000 Residual oxygen contamination of InAlGaAs SQW high-power laser diodes
John Stuart Roberts, Lesley M. Smith, Peter L. Tihanyi
Author Affiliations +
Abstract
MOVPE grown InAlGaAs SQW lasers for approximately 730 nm have been optimized for low oxygen incorporation, where diethylether associated with trimethylindium (TMI) provides the dominant oxygen impurity. An ether free preparative route to TMI, together with a large indium fraction for the SQW has provided device lifetimes of approximately 2000 hours when operating at 1.2 W and 743 nm.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John Stuart Roberts, Lesley M. Smith, and Peter L. Tihanyi "Residual oxygen contamination of InAlGaAs SQW high-power laser diodes", Proc. SPIE 3947, In-Plane Semiconductor Lasers IV, (18 April 2000); https://doi.org/10.1117/12.382107
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Oxygen

Indium

Quantum wells

Aluminum

Contamination

High power lasers

Semiconducting wafers

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