Residual oxygen contamination of InAlGaAs SQW high-power laser diodes

John Stuart Roberts; Lesley M. Smith; Peter L. Tihanyi

doi:10.1117/12.382107

18 April 2000 Residual oxygen contamination of InAlGaAs SQW high-power laser diodes

John Stuart Roberts, Lesley M. Smith, Peter L. Tihanyi

Proceedings Volume 3947, In-Plane Semiconductor Lasers IV; (2000) https://doi.org/10.1117/12.382107
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

MOVPE grown InAlGaAs SQW lasers for approximately 730 nm have been optimized for low oxygen incorporation, where diethylether associated with trimethylindium (TMI) provides the dominant oxygen impurity. An ether free preparative route to TMI, together with a large indium fraction for the SQW has provided device lifetimes of approximately 2000 hours when operating at 1.2 W and 743 nm.

Citation Download Citation

John Stuart Roberts, Lesley M. Smith, and Peter L. Tihanyi "Residual oxygen contamination of InAlGaAs SQW high-power laser diodes", Proc. SPIE 3947, In-Plane Semiconductor Lasers IV, (18 April 2000); https://doi.org/10.1117/12.382107

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