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18 April 2000 Type-II mid-infrared lasers
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Proceedings Volume 3947, In-Plane Semiconductor Lasers IV; (2000)
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
Recent progress towards the realization of high-power, non- cryogenic (quasi-)cw mid-IR lasers based on the `W' configuration of the active region is reported. Type-II diodes with AlGaAsSb broadened-waveguide separate confinement regions are the first III-V interband lasers to achieve room-temperature pulsed operation at a wavelength longer than 3 micrometers . For cw operation, Tmax was 195 K and Pout equals 140 mW was measured at 77 K. Optically- pumped W lasers recently attained the highest cw operating temperatures (290 K) of any semiconductor laser emitting in the 3 - 6 micrometers range. For a (lambda) equals 3.2 micrometers device at 77 K, the maximum cw output power was 0.54 W per uncoated facet. In order to maximize the absorption of the pump in the active region, an optical pumping injection cavity structure was used to create an etalon cavity for the 2.1 micrometers pump beam. The pulsed incident pump intensity at threshold was only 8 kW/cm2 at 300 K for this edge- emitting mid-IR laser. The differential power conversion efficiency was 9% at 77 K and 4% at 275 K, which indicates promising prospects for achieving high cw output powers at TE-cooler temperatures following further optimization.
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