13 April 2000 Electron and photon effects in imaging devices utilizing quantum dot infrared photodetectors and light-emitting diodes
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Proceedings Volume 3948, Photodetectors: Materials and Devices V; (2000) https://doi.org/10.1117/12.382121
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
Abstract
This paper presents the recent developments of device models for quantum dot IR photodetectors (QDIPs) and for imagers based on the integration of these photodetectors with light emitting diodes (LEDs). We derive analytical formulas for the dark current and the responsivity in QDIPs based on different QD structures and the QDIP-LED contrast transfer characteristic as functions of the structural parameters and the bias voltage. It is shown that the characteristics of QDIPs are strongly affected by the effect of electron accumulation in QDs close to the emitter contact. The main effect limiting QDIP-LED imager resolution is associated with the processes of photon reabsorption and reemission in the device LED part.
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Victor Ryzhii, Victor Ryzhii, Irina Khmyrova, Irina Khmyrova, } "Electron and photon effects in imaging devices utilizing quantum dot infrared photodetectors and light-emitting diodes", Proc. SPIE 3948, Photodetectors: Materials and Devices V, (13 April 2000); doi: 10.1117/12.382121; https://doi.org/10.1117/12.382121
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