13 April 2000 GaN Schottky diode ultraviolet detectors grown by molecular beam epitaxy
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Proceedings Volume 3948, Photodetectors: Materials and Devices V; (2000) https://doi.org/10.1117/12.382135
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
Abstract
Vertical geometry Schottky barrier photodiodes have been fabricated on n-GaN films grown by molecular beam epitaxy (MBE). Vertical mesas were fabricated by RIE and Schottky barriers were achieved by depositing Ni/Pt/Au metal contacts. I-V measurements show near ideal diode behavior, with reverse saturation current density of 1 X 109 A/cm2. Doping concentration and barrier height were determined to be 9 X 1016 cm-3 and 1.0V respectively, using C-V measurements. The diodes were then evaluated as UV photodiodes. The responsivity was measured to be 0.18A/W, corresponding to a quantum efficiency of 70 percent. Spectral response showed a sharp transition at 365 nm, and more than five orders of magnitude visible light rejection. Low frequency noise measurements indicate that 1/f noise is the dominant source of noise. The detectivity was determined to be 1.3 X 10-9 W/Hz1/2.
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Mira Misra, Anand V. Sampath, E. Iliopoulos, Theodore D. Moustakas, "GaN Schottky diode ultraviolet detectors grown by molecular beam epitaxy", Proc. SPIE 3948, Photodetectors: Materials and Devices V, (13 April 2000); doi: 10.1117/12.382135; https://doi.org/10.1117/12.382135
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