Group III-nitride materials for ultraviolet detection applications

Peter P. Chow; Jody J. Klaassen; James M. Van Hove; Andrew M. Wowchak; Christina Polley; David King

doi:10.1117/12.382130

13 April 2000 Group III-nitride materials for ultraviolet detection applications

Peter P. Chow, Jody J. Klaassen, James M. Van Hove, Andrew M. Wowchak, Christina Polley, David King

Proceedings Volume 3948, Photodetectors: Materials and Devices V; (2000) https://doi.org/10.1117/12.382130
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

High performance UV detectors have been fabricated using group III-nitride materials grown by molecular beam epitaxy. GaN PIN detectors exhibit near quantum efficiency limited responsivity, sharp spectral cutoff, and high shunt resistance of several hundred mega-ohms for 0.5 mm² active area devices. Comparison of PIN and Schottky devices is presented. The capabilities of group III-nitride based UV detectors is discussed in relation to suitability in UV sensing applications such as high temperature flame sensing, UV-B solar radiation monitoring, and high intensity UV dosimetry.

Citation Download Citation

Peter P. Chow, Jody J. Klaassen, James M. Van Hove, Andrew M. Wowchak, Christina Polley, and David King "Group III-nitride materials for ultraviolet detection applications", Proc. SPIE 3948, Photodetectors: Materials and Devices V, (13 April 2000); https://doi.org/10.1117/12.382130

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