13 April 2000 Growth and characterization of very long wavelength type-II infrared detectors
Author Affiliations +
Proceedings Volume 3948, Photodetectors: Materials and Devices V; (2000) https://doi.org/10.1117/12.382113
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
We report on the growth and characterization of type-II IR detectors with a InAs/GaSb superlattice active layer in the 15-19 micrometers wavelength range. The material was grown by molecular beam epitaxy on semi-insulating GaAs substrates. The material was processed into photoconductive detectors using standard photolithography, dry etching, and metalization. The 50 percent cut-off wavelength of the detectors is about 15.5 micrometers with a responsivity of 90mA/W at 80K. The 90 percent-10 percent cut-off energy width of the responsivity is only 17meV which is an indication of the uniformity of the superlattices. These are the best reported values for type-II superlattices grown on GaAs substrates.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hooman Mohseni, Hooman Mohseni, Abbes Tahraoui, Abbes Tahraoui, Joseph S. Wojkowski, Joseph S. Wojkowski, Manijeh Razeghi, Manijeh Razeghi, W. C. Mitchel, W. C. Mitchel, Adam W. Saxler, Adam W. Saxler, } "Growth and characterization of very long wavelength type-II infrared detectors", Proc. SPIE 3948, Photodetectors: Materials and Devices V, (13 April 2000); doi: 10.1117/12.382113; https://doi.org/10.1117/12.382113

Back to Top