13 April 2000 Growth and characterization of very long wavelength type-II infrared detectors
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Proceedings Volume 3948, Photodetectors: Materials and Devices V; (2000) https://doi.org/10.1117/12.382113
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
Abstract
We report on the growth and characterization of type-II IR detectors with a InAs/GaSb superlattice active layer in the 15-19 micrometers wavelength range. The material was grown by molecular beam epitaxy on semi-insulating GaAs substrates. The material was processed into photoconductive detectors using standard photolithography, dry etching, and metalization. The 50 percent cut-off wavelength of the detectors is about 15.5 micrometers with a responsivity of 90mA/W at 80K. The 90 percent-10 percent cut-off energy width of the responsivity is only 17meV which is an indication of the uniformity of the superlattices. These are the best reported values for type-II superlattices grown on GaAs substrates.
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Hooman Mohseni, Abbes Tahraoui, Joseph S. Wojkowski, Manijeh Razeghi, W. C. Mitchel, Adam W. Saxler, "Growth and characterization of very long wavelength type-II infrared detectors", Proc. SPIE 3948, Photodetectors: Materials and Devices V, (13 April 2000); doi: 10.1117/12.382113; https://doi.org/10.1117/12.382113
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