13 April 2000 Growth and optical investigations of InN textured layers
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Proceedings Volume 3948, Photodetectors: Materials and Devices V; (2000) https://doi.org/10.1117/12.382138
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
A low temperature plasma enhanced chemical reactionary synthesis was applied to grow of InN thin polycrystalline layers. Insensitive Ti-wire evaporation was carried out during all the time of deposition process to reduce oxygen contamination inside of reactor as well as in growing films. A wide variety of deposition parameters like plasma power, deposition time and pressure, substrate's temperature and reactionary gas flow rate were intentionally changed and studied to obtain the high quality textured InN layers up to 2000 nm of thickness. AFM and SEM investigations of natural surface morphology and fractured edge of InN layers on ceramics indicates clearly a surface texture with a pyramidal form of grains. Optical absorption and reflectance spectra of InN textured layers at room temperature in visible and near IR regions were taken to determine direct band gap energy, electron plasma resonances energy, damping constant as well as optical effective mass of electrons. Some TO and LO phonon features of InN textured layers in NIR and Raman spectra are observed and discussed.
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Vladislav Ya. Malakhov "Growth and optical investigations of InN textured layers", Proc. SPIE 3948, Photodetectors: Materials and Devices V, (13 April 2000); doi: 10.1117/12.382138; https://doi.org/10.1117/12.382138

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