13 April 2000 Growth and optimization of GaInAsP/InP material system for quantum well infrared photodetector applications
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Proceedings Volume 3948, Photodetectors: Materials and Devices V; (2000) https://doi.org/10.1117/12.382123
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
Multi-quantum well structures of GaxIn1-xAsyP1-y were grown by metalorganic chemical vapor deposition for the fabrication of quantum well IR photodetectors. The thickness and composition of the wells was determined by high-resolution x-ray diffraction and photoluminescence experiments. The intersubband absorption spectrum of the Ga0.47In0.53As/InP, Ga0.38In0.62As0.80P0.20 (1.55 micrometers )/InP, and Ga0.27In0.73As0.57P0.43 (1.3 micrometers )/InP quantum wells are found to have cutoff wavelengths of 9.3 micrometers , 10.7 micrometers , and 14.2 micrometers respectively. These wavelengths are consistent with a conduction band offset to bandgap ratio of approximately 0.32. Facet coupled illumination responsivity and detectivity are reported for each composition.
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Matthew Erdtmann, J. Jiang, Anthony W. Matlis, Abbes Tahraoui, Christopher Louis Jelen, Manijeh Razeghi, Gail J. Brown, "Growth and optimization of GaInAsP/InP material system for quantum well infrared photodetector applications", Proc. SPIE 3948, Photodetectors: Materials and Devices V, (13 April 2000); doi: 10.1117/12.382123; https://doi.org/10.1117/12.382123


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