13 April 2000 High quantum efficiency AlxGa1-xN/GaN-based ultraviolet p-i-n photodetectors with a recessed window structure
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Proceedings Volume 3948, Photodetectors: Materials and Devices V; (2000) https://doi.org/10.1117/12.382131
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
Abstract
We report on the improved quantum efficiency of both GaN homojunction and AlxGa1-xN/GaN heterojunction photodiodes using a recessed window device structure. A very high quantum efficiency of 77 percent at 357 nm and also a much improved quantum efficiency at the solar blind wavelengths were achieved. A spatial non-uniformity problem on the large area devices was observed with 2D raster scan photocurrent measurements. The spatial non-uniformity is attributed to an electric field crowding effect that is primarily caused by the high resistivity of the p-GaN layer with the aid of Medici simulations.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ting Li, Ting Li, Shuling Wang, Shuling Wang, Ariane L. Beck, Ariane L. Beck, Charles J. Collins, Charles J. Collins, Bo Yang, Bo Yang, Russell D. Dupuis, Russell D. Dupuis, John C. Carrano, John C. Carrano, Matthew J. Schurman, Matthew J. Schurman, Ian T. Ferguson, Ian T. Ferguson, Joe C. Campbell, Joe C. Campbell, } "High quantum efficiency AlxGa1-xN/GaN-based ultraviolet p-i-n photodetectors with a recessed window structure", Proc. SPIE 3948, Photodetectors: Materials and Devices V, (13 April 2000); doi: 10.1117/12.382131; https://doi.org/10.1117/12.382131
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