Mid-IR InAsSb photovoltaic detectors

Anna Rakovska; Vincent Berger; Xavier Marcadet; Genevieve Glastre; Borge Vinter; K. Bouzehouane; Daniel Kaplan; T. Oksehendler

doi:10.1117/12.382144

13 April 2000 Mid-IR InAsSb photovoltaic detectors

Anna Rakovska, Vincent Berger, Xavier Marcadet, Genevieve Glastre, Borge Vinter, K. Bouzehouane, Daniel Kaplan, T. Oksehendler

Author Affiliations +

Proceedings Volume 3948, Photodetectors: Materials and Devices V; (2000) https://doi.org/10.1117/12.382144
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

We describe a mid-IR photovoltaic detector using InAsSb as active material, grown by MBE on a GaSb substrate. The purpose of this study is to show that quantum detectors can offer an alternative to thermal detectors for high temperature operation. With a 9 percent Sb content, InAsSb is lattice matched to GaSb and thus provides an excellent material quality, with Shokley-Read lifetimes of the order of 200 ns as measured by photoconductive gain measurements as well as time resolved photoconductivity experiments. The band gap of InAsSb corresponds to a wavelengths as well as time resolved photoconductivity experiments. The band gap of InAsSb corresponds to a wavelength of 5 microns at room temperature. This makes InAsSb an ideal candidate for rom temperature detection in the 3-5 microns atmospheric window. Photovoltaic structures are characterized by current voltage characteristics as a function of temperature. Using the absorption value obtained on the test samples, a detectivity of 7 by 10⁹ Jones can be obtained at a temperature of 250 K, which can easily be reached with Peltier cooling. This leads to a NETD lower than 80 mK.

Citation Download Citation

Anna Rakovska, Vincent Berger, Xavier Marcadet, Genevieve Glastre, Borge Vinter, K. Bouzehouane, Daniel Kaplan, and T. Oksehendler "Mid-IR InAsSb photovoltaic detectors", Proc. SPIE 3948, Photodetectors: Materials and Devices V, (13 April 2000); https://doi.org/10.1117/12.382144

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