13 April 2000 Type-II InAs/InGaSb SL photodetectors
Author Affiliations +
Proceedings Volume 3948, Photodetectors: Materials and Devices V; (2000) https://doi.org/10.1117/12.382112
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
We report a set of high-quality InAs/InGaSb type-II photodetectors grown on GaSb substrates with cutoff wavelengths form 11 to 21 micrometers . The SL structural parameters were very repeatable between samples as evidenced by the consistency of the SL periods and the long wavelength photoresponse cut-off. The measured photoresponse spectra were in excellent agreement with the calculated absorption spectrum. Very low background carrier concentrations were achieved in this samples set. Based on the study, the optimum growth temperature for type-II photodetectors is between 390 to 410 C with a post growth annealing at 495 to 510 C. Thickness non-uniformity of type-II photodiodes was less than 1 percent across 2-inch wafers. We have also demonstrated photodetectors with good performance from 10 to 18 micrometers , directly grown on compliant InGaAs/GaAs substrates.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C.H. Thompson Lin, C.H. Thompson Lin, K. Alex Anselm, K. Alex Anselm, Chau-Hong Kuo, Chau-Hong Kuo, A. M. Delaney, A. M. Delaney, Gail J. Brown, Gail J. Brown, Krishnamur Mahalingam, Krishnamur Mahalingam, Adam W. Saxler, Adam W. Saxler, Raymond J. Linville, Raymond J. Linville, Frank Szmulowicz, Frank Szmulowicz, Vaidya Nathan, Vaidya Nathan, } "Type-II InAs/InGaSb SL photodetectors", Proc. SPIE 3948, Photodetectors: Materials and Devices V, (13 April 2000); doi: 10.1117/12.382112; https://doi.org/10.1117/12.382112

Back to Top