InP-based monolithic integration of 1.55-um MQW laser diode and HBT driver circuit

Xian-Jie Li; Fang-Hai Zhao; Qing-Ming Zeng; Yi Dong; Xu-hui Li; Shuren Yang; Ke-Li Cai; Benzhong Wang; Jin-Ping Ao; Chun-Guang Liang; Shiyong Liu

doi:10.1117/12.382891

21 April 2000 InP-based monolithic integration of 1.55-μm MQW laser diode and HBT driver circuit

Xian-Jie Li, Fang-Hai Zhao, Qing-Ming Zeng, Yi Dong, Xu-hui Li, Shuren Yang, Ke-Li Cai, Benzhong Wang, Jin-Ping Ao, Chun-Guang Liang, Shiyong Liu

Author Affiliations +

Proceedings Volume 3949, WDM and Photonic Switching Devices for Network Applications; (2000) https://doi.org/10.1117/12.382891
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

An improved fabrication process and related experiment results of an InP-based monolithic integrated transmitter OEIC with a 1.55 micrometers MQW laser diode (LD) and an InP/InGaAs heterojunction bipolar transistors (HBT) driver circuit are presented. The epitaxial structure of the laser and driver circuits were continuously grown on semi- insulating Fe-doped InP substrate by a metal-organic chemical vapor deposition system using a vertically integration. HCL, H₃PO₄/H₂O₂ and HBr/HNO₃ solution system were involved as selective or nonelective wet chemical etching respectively for the epitaxies of InP, InGaAs and InGaPAs. Both a nearly-standard contact photolithography depending on a two-step exposure technique and an electrical connection related to smoothly wet chemical etching profile of InP and InGaP in the crystal direction of (01-1) were developed in the process. The laser diode with a 3-um-wide ridge waveguide forming by a double- groove process self-aligned to the metal contact of P-type region showed an average threshold current as low as about 10mA. The HBT with a 120-nm-thick base layer performed a DC current gain of about 60-70 and an emitter-collector breakdown voltage of up to 4-5V. A clear eye diagram of the monolithic transmitter under a pulsed operation with 622Mbit/s bitrate nonreturn-to-zero pseudorandom code was obtained.

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Xian-Jie Li, Fang-Hai Zhao, Qing-Ming Zeng, Yi Dong, Xu-hui Li, Shuren Yang, Ke-Li Cai, Benzhong Wang, Jin-Ping Ao, Chun-Guang Liang, and Shiyong Liu "InP-based monolithic integration of 1.55-μm MQW laser diode and HBT driver circuit", Proc. SPIE 3949, WDM and Photonic Switching Devices for Network Applications, (21 April 2000); https://doi.org/10.1117/12.382891

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KEYWORDS

Transmitters

Photonic integrated circuits

Semiconductor lasers

Metals

Wet etching

Epitaxy

Crystals

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