InP-based monolithic integration of 1.55-&mu;m MQW laser diode and HBT driver circuit

Xian-Jie Li; Fang-Hai Zhao; Qing-Ming Zeng; Yi Dong; Xu-hui Li; Shuren Yang; Ke-Li Cai; Benzhong Wang; Jin-Ping Ao; Chun-Guang Liang; Shiyong Liu

doi:10.1117/12.382891

21 April 2000 InP-based monolithic integration of 1.55-μm MQW laser diode and HBT driver circuit

Xian-Jie Li; Fang-Hai Zhao; Qing-Ming Zeng; Yi Dong; Xu-hui Li; Shuren Yang; Ke-Li Cai; Benzhong Wang; Jin-Ping Ao; Chun-Guang Liang; Shiyong Liu

Author Affiliations +

Proceedings Volume 3949, WDM and Photonic Switching Devices for Network Applications; (2000) https://doi.org/10.1117/12.382891
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

An improved fabrication process and related experiment results of an InP-based monolithic integrated transmitter OEIC with a 1.55 micrometers MQW laser diode (LD) and an InP/InGaAs heterojunction bipolar transistors (HBT) driver circuit are presented. The epitaxial structure of the laser and driver circuits were continuously grown on semi- insulating Fe-doped InP substrate by a metal-organic chemical vapor deposition system using a vertically integration. HCL, H₃PO₄/H₂O₂ and HBr/HNO₃ solution system were involved as selective or nonelective wet chemical etching respectively for the epitaxies of InP, InGaAs and InGaPAs. Both a nearly-standard contact photolithography depending on a two-step exposure technique and an electrical connection related to smoothly wet chemical etching profile of InP and InGaP in the crystal direction of (01-1) were developed in the process. The laser diode with a 3-um-wide ridge waveguide forming by a double- groove process self-aligned to the metal contact of P-type region showed an average threshold current as low as about 10mA. The HBT with a 120-nm-thick base layer performed a DC current gain of about 60-70 and an emitter-collector breakdown voltage of up to 4-5V. A clear eye diagram of the monolithic transmitter under a pulsed operation with 622Mbit/s bitrate nonreturn-to-zero pseudorandom code was obtained.

Citation Download Citation

Xian-Jie Li, Fang-Hai Zhao, Qing-Ming Zeng, Yi Dong, Xu-hui Li, Shuren Yang, Ke-Li Cai, Benzhong Wang, Jin-Ping Ao, Chun-Guang Liang, Shiyong Liu, "InP-based monolithic integration of 1.55-μm MQW laser diode and HBT driver circuit", Proc. SPIE 3949, WDM and Photonic Switching Devices for Network Applications, (21 April 2000); doi: 10.1117/12.382891; https://doi.org/10.1117/12.382891

ACCESS THE FULL ARTICLE

PERSONAL SIGN IN
Full access may be available with your subscription

Email or Username Forgot your username?

Password Forgot your password?

Show

Remember Email/Username on this computer

Remember Password

No SPIE account? Create an account
or Institutional Sign In via Shibboleth

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $14.40

Non-members: $18.00 ADD TO CART

Show All Keywords

Keywords/Phrases

Search In:

Publication Years