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19 April 2000 Monolithically integrated semiconductor active and passive optical waveguide devices grown by selective epitaxy
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Proceedings Volume 3950, Optoelectronic Integrated Circuits IV; (2000)
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
We report on a low-cost monolithic integration method for fabricating semiconductor photonic integrated circuits using selective epitaxy without regrowth. To build a photonic circuit, active and passive devices are required with different energy band gaps. Selective-area growth that uses a mask of parallel SiO2 strips on a substrate induces variations in epilayer thickness and composition that result in localized shifts of the band gap. From our photoluminescence measurements on such selectively grown InGaAsP/InP multiple quantum well-waveguide materials, a band gap shift above 100 meV has been observed. We developed a waveguide device processing technique for this kind of selective epitaxy material. A few combinations of integrated waveguide splitters, modulators, and amplifiers were designed and fabricated. To test each individual device, we designed a new measurement method which determines the insertion loss and the intrinsic waveguide loss for a device in the middle of an integrated system. Preliminary results indicate few dB gain for a 0.6 mm long amplifier and approximately 10 dB contrast for a modulator operating near 1550 nm. Based on the initial data, new quantum well layer and waveguide structures have been designed to improve the performance in our next-generation devices.
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Weimin Zhou, Hongen Shen, Matthew H. Ervin, J. Conrad, and Jagadeesh Pamulapati "Monolithically integrated semiconductor active and passive optical waveguide devices grown by selective epitaxy", Proc. SPIE 3950, Optoelectronic Integrated Circuits IV, (19 April 2000);

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