15 March 2000 Ge-on-Si high-responsivity near-infrared photodetectors
Author Affiliations +
Proceedings Volume 3953, Silicon-based Optoelectronics II; (2000) https://doi.org/10.1117/12.379609
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
We report the fabrication of fast heterojunction Ge/Si photodetectors which, to the best of our knowledge, exhibit the highest near infrared responsivity at normal incidence reported to date. Such performances are related to the quality of the epitaxial Ge film grown by a two-step UHV-CVD process followed by cyclic thermal annealing. We have measured a fast (FWHM equals 850 ps at 1.3 micrometers ) and efficient (R equals 0.55 A/W at 1.3 micrometers and 0.25 A/W at 1.55 micrometers ) photoresponse. Our technology makes these devices suitable for integration with other electronic and optoelectronic components on Si chips. In the paper we discuss processing technology, material quality, device fabrication and performance measurements.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gianlorenzo Masini, Gianlorenzo Masini, Lorenzo Colace, Lorenzo Colace, Gaetano Assanto, Gaetano Assanto, Hsin-Chiao Luan, Hsin-Chiao Luan, Kazumi Wada, Kazumi Wada, Lionel C. Kimerling, Lionel C. Kimerling, } "Ge-on-Si high-responsivity near-infrared photodetectors", Proc. SPIE 3953, Silicon-based Optoelectronics II, (15 March 2000); doi: 10.1117/12.379609; https://doi.org/10.1117/12.379609

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