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15 March 2000 Ge-on-Si high-responsivity near-infrared photodetectors
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Proceedings Volume 3953, Silicon-based Optoelectronics II; (2000)
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
We report the fabrication of fast heterojunction Ge/Si photodetectors which, to the best of our knowledge, exhibit the highest near infrared responsivity at normal incidence reported to date. Such performances are related to the quality of the epitaxial Ge film grown by a two-step UHV-CVD process followed by cyclic thermal annealing. We have measured a fast (FWHM equals 850 ps at 1.3 micrometers ) and efficient (R equals 0.55 A/W at 1.3 micrometers and 0.25 A/W at 1.55 micrometers ) photoresponse. Our technology makes these devices suitable for integration with other electronic and optoelectronic components on Si chips. In the paper we discuss processing technology, material quality, device fabrication and performance measurements.
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Gianlorenzo Masini, Lorenzo Colace, Gaetano Assanto, Hsin-Chiao Luan, Kazumi Wada, and Lionel C. Kimerling "Ge-on-Si high-responsivity near-infrared photodetectors", Proc. SPIE 3953, Silicon-based Optoelectronics II, (15 March 2000);

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