15 March 2000 High quantum efficiency diode photodetector based on ultrathin InGaAs-on-Si films
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Proceedings Volume 3953, Silicon-based Optoelectronics II; (2000) https://doi.org/10.1117/12.379608
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
We report on a new type of a high quantum efficiency diode photodetector based on ultra-thin low temperature-grown InGaAs-on-Si heteroepitaxial layer. The device was characterized optically and electrically using low- temperature photoluminescence, capacitance-voltage, current- voltage, DLTS and spectral responsivity measurements. We study characteristics of the photodetectors with various In contents in InGaAs film. Photosensitivity spectral characteristics shift to the longer wavelengths with In/Ga flux ratio increase during the ultra-thing film growth. This dependence proves that photosensitivity of the InGaAs/Si heterostructure is a result of photons absorption and carrier separation in thin epitaxial layer of the polar semiconductor (2 - 20 nm). DLTS measurements underscore the role of a trap with activation energy of 0.59 eV in the photodetector properties. Using capacity-voltage measurements we demonstrate that the trap has delta-like spatial distribution and is localized at InGaAs/Si interface. According to our estimations the photosensitivity of the photodetectors exceeds 1.5 A/W at wavelength of 632.8 nm. We also reveal that our InGaAs-on-Si photodetectors have high external quantum efficiency in ultraviolet region, which exceeds one in the visible region. The high responsivity of the photodetector is explained by effective carriers separation in InGaAs layer and the carrier multiplication effect at InGaAs/Si interface.
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Mikhail N. Naydenkov, Alexander V. Kvit, Mikhail V. Yakimov, "High quantum efficiency diode photodetector based on ultrathin InGaAs-on-Si films", Proc. SPIE 3953, Silicon-based Optoelectronics II, (15 March 2000); doi: 10.1117/12.379608; https://doi.org/10.1117/12.379608

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