15 March 2000 Light-emitting diodes fabricated in silicon/iron disilicide
Author Affiliations +
Proceedings Volume 3953, Silicon-based Optoelectronics II; (2000) https://doi.org/10.1117/12.379615
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
Attempts to obtain electroluminescence from silicon-based devices have been largely frustrated by the indirect bandgap of the semiconductor. One approach, described here, is to fabricate a direct bandgap material which is compatible with silicon processing and which can then be excited via standard carrier injection across p-n junctions. We have used ion implantation of iron, typically at an energy of 180 keV and a dose of 1.5 X 1016 cm-2, conditions which are easily achievable in modern commercial implanters, to form precipitates of (beta) -iron disilicide, which has a direct bandgap of 0.8 eV. At 80 K and under forward bias conditions, the devices emit light at 1.5 micrometers with an external quantum efficiency of 5 X 10-3, and emission at room temperature has been observed. The emission lifetime has been placed at shorter than 60 ns, as expected of a direct bandgap material. Results will be presented showing how the electroluminescence properties change with the dose of implanted iron.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Adrian K. Kewell, Adrian K. Kewell, Manon A. Lourenco, Manon A. Lourenco, Russell M. Gwilliam, Russell M. Gwilliam, Jane Sharpe, Jane Sharpe, C. McKinty, C. McKinty, Thomas R. Butler, Thomas R. Butler, Karen J. Reeson Kirkby, Karen J. Reeson Kirkby, Kevin P. Homewood, Kevin P. Homewood, "Light-emitting diodes fabricated in silicon/iron disilicide", Proc. SPIE 3953, Silicon-based Optoelectronics II, (15 March 2000); doi: 10.1117/12.379615; https://doi.org/10.1117/12.379615


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