15 March 2000 Measurement and exploitation of the thermo-optic effect in silicon for light switching in optoelectronic integrated circuits
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Proceedings Volume 3953, Silicon-based Optoelectronics II; (2000) https://doi.org/10.1117/12.379604
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
Abstract
The careful design of active and passive silicon-based optoelectronic devices requires the precise knowledge of the refractive index and its modification with temperature. The thermo-optic coefficient ((partial)n/(partial)T) of silicon has been therefore measured in the temperature range from 30 to 300 degree(s)C at the important wavelength of 1.5 micrometers for fiber-optic communication applications. The adopted technique is very simple and reliable, and is based on the measurement of the modal shift induced by temperature variations in a Fabry-Perot resonant cavity made of the material to be characterized, namely silicon. As an interferometric measure scheme, the technique provides high precision and sensitivity. Various samples of silicon were characterized, differing in doping type, doping level, and crystal plane orientation. The reported data allows to rule out the temperature dependence of the thermo-optic coefficient of silicon on the considered technological parameters.
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Francesco G. Della Corte, Francesco G. Della Corte, Marco Bellucci, Marco Bellucci, Giuseppe Cocorullo, Giuseppe Cocorullo, Mario Iodice, Mario Iodice, Ivo Rendina, Ivo Rendina, "Measurement and exploitation of the thermo-optic effect in silicon for light switching in optoelectronic integrated circuits", Proc. SPIE 3953, Silicon-based Optoelectronics II, (15 March 2000); doi: 10.1117/12.379604; https://doi.org/10.1117/12.379604
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