15 March 2000 Self-assembled InAs/Si quantum dot stacks grown by molecular beam epitaxy
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Proceedings Volume 3953, Silicon-based Optoelectronics II; (2000) https://doi.org/10.1117/12.379603
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
We report on the growth of InAs Quantum dot stacks of various periods on silicon grown by molecular beam epitaxy. Quantum dot layers of InAs, separated by a very thin GaAs spacer layer, are grown directly on hydrogen terminated (100) Si surface. The dependence of dimensional distribution on the growth parameters like temperature and monolayer coverage is studied by atomic force microscopy. The effects of rapid thermal annealing on the stability of stacked structures are investigated by Raman scattering experiments. The morphological changes are characterized in terms of shifts in the longitudinal optic and transverse optic phonon modes of InAs and GaAs forming the structure. Post growth annealing has been found to lead to significant alloying of InAs and GaAs in the successive layers leading to the transformation of 3D quantum dot structure to a 2D InxGa1-xAs like compositional alloy layer.
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P. C. Sharma, P. C. Sharma, Y. S. Tang, Y. S. Tang, K. W. Alt, K. W. Alt, Kang Lung Wang, Kang Lung Wang, "Self-assembled InAs/Si quantum dot stacks grown by molecular beam epitaxy", Proc. SPIE 3953, Silicon-based Optoelectronics II, (15 March 2000); doi: 10.1117/12.379603; https://doi.org/10.1117/12.379603

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