15 May 2000 Analysis of 1/f noise in CMOS APS
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Abstract
As CMOS technology scales, the effect of 1/f noise on low frequency analog circuits such as CMOS image sensors becomes more pronounced, and therefore must be more accurately estimated. analysis of 1/f noise is typically performed in the frequency domain even though the process is nonstationary. To find out if the frequency domain analysis produces acceptable results, the paper introduces a time domain method based on a nonstationary extension of a recently developed, and generally agreed upon physical model for 1/f noise in MOS transistors. The time domain method is used to analyze the effect of 1/f noise due to pixel level transistors in a CMOS APS. The results show that the frequency domain results can be quite inaccurate especially in estimating the 1/f noise effect of the reset transistor. It is also shown that CDS does not in general reduce the effect of the 1/f noise.
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Hui Tian, Hui Tian, Abbas El Gamal, Abbas El Gamal, } "Analysis of 1/f noise in CMOS APS", Proc. SPIE 3965, Sensors and Camera Systems for Scientific, Industrial, and Digital Photography Applications, (15 May 2000); doi: 10.1117/12.385433; https://doi.org/10.1117/12.385433
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