15 May 2000 Influence of pixel topology on performances of CMOS APS imagers
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Abstract
This paper describes a 128 X 128 pixels prototype array organized as sub-arrays of 32 X 32 pixels each, with 21 micrometers pixel pitch. The sub-arrays, photodiode or photogate based, are implemented using a standard 0.7 micrometers CMOS process. Various topologies of the photosensitive area have been implemented and some of them have an optical metal shield over the so-called non-sensitive area to evaluate the contribution of the active electronic area to the responsivity of the sensor. A synthesis of the measurements carried out by CIMI-SUPAERO and MMS, addressing darkness parameters, noise, photometric and radiometric performances, are presented with emphasis on the photogate type pixels. Results of spot-scan analysis and crosstalk measurements performed on selected topologies are also reported. Several samples were irradiated at different proton doses and their related behavior is discussed. From these results, a new 512 X 512 pixels array has been designed for space applications. The main features of this APS device are presented here.
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Pierre Magnan, Anne Gautrand, Yavuz Degerli, Cecile Marques, Francis Lavernhe, Cyril Cavadore, Franck Corbiere, Jean A. Farre, Olivier Saint-Pe, Michel Tulet, Robert Davancens, "Influence of pixel topology on performances of CMOS APS imagers", Proc. SPIE 3965, Sensors and Camera Systems for Scientific, Industrial, and Digital Photography Applications, (15 May 2000); doi: 10.1117/12.385429; https://doi.org/10.1117/12.385429
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