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15 May 2000 Newly improved very high sensitivity electron bombardment CCD sensor and camera
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Abstract
Electron Bombardment CCD sensor (EB-CCD) had originally developed for the low light imaging application and recently it has been coming to be used as an alternative to SIT tube camera and I-CCD camera. However, some of applications required higher sensitivity and higher dynamic range. In order to meet these expectations, we have been continuing the improvement of sensor such as higher gain and higher quantum efficiency. In this paper, we would like to introduce the new high gain sensor and new photo-cathode of GaAs and GaAsP, which realize the 30 to 50% quantum efficiency. And also we would like to show that how GaAs EB- CCD is sensitive based on the sensitivity comparison test between multi alkali photo-cathode image intensifier and new GaAs photo-cathode EB-CCD sensor.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tadashi Maruno, Mashahiko Shirai, Motohiro Suyama, and Shogo Ema "Newly improved very high sensitivity electron bombardment CCD sensor and camera", Proc. SPIE 3965, Sensors and Camera Systems for Scientific, Industrial, and Digital Photography Applications, (15 May 2000); https://doi.org/10.1117/12.385441
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