3 February 2000 Cluster tool for photomask inspection and qualification at 150-nm design rules and beyond
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Proceedings Volume 3996, 16th European Conference on Mask Technology for Integrated Circuits and Microcomponents; (2000) https://doi.org/10.1117/12.377100
Event: 16th European Conference on Mask Technology for Integrated Circuits and Microcomponents, 1999, Munich, Germany
Abstract
The reduction of the wave length in the optical lithography in combination with mask enhancement techniques like phase shift pattern, optical proximity correction (OPC) or off- axis illumination requires a rapid increase in measurement accuracy and cost effective qualification of advanced photo masks. The knowledge about the impact of CD deviations, loss of pattern fidelity--especially of OPC structures--and mask defects on wafer level in more and more essential for mask qualification.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kai Peter, Kai Peter, Volodymyr Ordynskyy, Volodymyr Ordynskyy, Christoph Dolainsky, Christoph Dolainsky, Hans Hartmann, Hans Hartmann, Hans-Juergen Brueck, Hans-Juergen Brueck, } "Cluster tool for photomask inspection and qualification at 150-nm design rules and beyond", Proc. SPIE 3996, 16th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (3 February 2000); doi: 10.1117/12.377100; https://doi.org/10.1117/12.377100
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