3 February 2000 Development of embedded attenuated phase-shifting mask (EAPSM) blanks for ArF lithography
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Proceedings Volume 3996, 16th European Conference on Mask Technology for Integrated Circuits and Microcomponents; (2000) https://doi.org/10.1117/12.377098
Event: 16th European Conference on Mask Technology for Integrated Circuits and Microcomponents, 1999, Munich, Germany
Abstract
The embedded attenuated phase-shift mask (EAPSM) has been in practical use for i-line and deep UV lithography. In 193 nm lithography, too, the EAPSM is considered to be a promising resolution enhancement technique for its simple structure and fabrication process required. We at HOYA have attempted to extend the applicability of MoSi-based EAPSM blanks to 193 nm lithography, helping extend the life of the existing infrastructure for conventional EAPSM fabrication. We have completed tuning our new MoSi-based film for 193 nm lithography and characterized its optical properties, chemical durability, ArF laser exposure durability and mask- making process compatibility.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hideaki Mitsui, Hideaki Mitsui, Osamu Nozawa, Osamu Nozawa, Hitoshi Ohtsuka, Hitoshi Ohtsuka, Megumi Takeuchi, Megumi Takeuchi, Hideo Kobayashi, Hideo Kobayashi, Masao Ushida, Masao Ushida, } "Development of embedded attenuated phase-shifting mask (EAPSM) blanks for ArF lithography", Proc. SPIE 3996, 16th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (3 February 2000); doi: 10.1117/12.377098; https://doi.org/10.1117/12.377098
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