3 February 2000 High-precision mask fabrication for deep-x-ray lithography
Author Affiliations +
Proceedings Volume 3996, 16th European Conference on Mask Technology for Integrated Circuits and Microcomponents; (2000) https://doi.org/10.1117/12.377113
Event: 16th European Conference on Mask Technology for Integrated Circuits and Microcomponents, 1999, Munich, Germany
Abstract
Deep X-ray lithography with synchrotron radiation represents the primary process step of the LIGA technique, by means of which high volume production of micro-mechanical, micro- optical and micro-fluidic components becomes possible. We report on a new approach where the direct patterning of an intermediate mask has been performed by an upgraded Leica ZBA23 shaped beam electron writer with an acceleration voltage of 40 kV. Optimized development and exposure processes as well as the use of particularly performed proximity correction methods allowed to product feature sizes down to 0.4 micrometers . Taking CD-values of the final gold absorber structure as a target, an optimized parameter set has been found to manufacture periodic lines-and-spaces structures of 1.5 micrometers width with an accuracy of 0.18 micrometers per edge which were written into 2 micrometers thick PMMA resist.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andreas Schmidt, Andreas Schmidt, Gerhard Himmelsbach, Gerhard Himmelsbach, Regina Luettge, Regina Luettge, Dieter Adam, Dieter Adam, Falk Hoke, Falk Hoke, Hartmut Schacke, Hartmut Schacke, Nikola Belic, Nikola Belic, Hans Hartmann, Hans Hartmann, Frank Burkhard, Frank Burkhard, Hermann Wolf, Hermann Wolf, } "High-precision mask fabrication for deep-x-ray lithography", Proc. SPIE 3996, 16th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (3 February 2000); doi: 10.1117/12.377113; https://doi.org/10.1117/12.377113
PROCEEDINGS
9 PAGES


SHARE
Back to Top