3 February 2000 Improvements to mask inspectability by use of pattern proximity correction
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Proceedings Volume 3996, 16th European Conference on Mask Technology for Integrated Circuits and Microcomponents; (2000) https://doi.org/10.1117/12.377109
Event: 16th European Conference on Mask Technology for Integrated Circuits and Microcomponents, 1999, Munich, Germany
Abstract
Inspection is one of the major challenges in mask making, as it is one of its most performance crucial steps in the entire mask making process. Especially contact patterns show difficulties in die-to-database inspection as the CAD data asks for square corners. The paper presents the impact of Laser Proximity Correction (LPC) on the inspectability of contact and line patterns. LPC is a mask enhancement technique improving image quality and CD linearity for laser pattern generators. The use of the linewidth bias monitor tool in order to characterize CD uniformity over the entire plate is demonstrated.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Anja Rosenbusch, Anja Rosenbusch, Vicky Bailey, Vicky Bailey, Yair Eran, Yair Eran, Reuven Falah, Reuven Falah, Neil J. Holmes, Neil J. Holmes, Andrew C. Hourd, Andrew C. Hourd, Andrew McArthur, Andrew McArthur, Wolfgang Staud, Wolfgang Staud, } "Improvements to mask inspectability by use of pattern proximity correction", Proc. SPIE 3996, 16th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (3 February 2000); doi: 10.1117/12.377109; https://doi.org/10.1117/12.377109
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