3 February 2000 Improving reticle yields with after develop inspection (ADI)
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Proceedings Volume 3996, 16th European Conference on Mask Technology for Integrated Circuits and Microcomponents; (2000); doi: 10.1117/12.377117
Event: 16th European Conference on Mask Technology for Integrated Circuits and Microcomponents, 1999, Munich, Germany
Abstract
In this study, After Develop Inspection was used to inspect Cr photomasks incorporating iP3600 and ZEP7000 resists at several thicknesses. The detected defects were analyzed and compared to defects found after etch. A test mask with programmed defects was also created and tested to characterize the sensitivity of this new capability.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Franklin D. Kalk, Keith J. Brankner, Laurie Peters, Anthony Vacca, Scott Pomeroy, David Emery, "Improving reticle yields with after develop inspection (ADI)", Proc. SPIE 3996, 16th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (3 February 2000); doi: 10.1117/12.377117; https://doi.org/10.1117/12.377117
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KEYWORDS
Inspection

Chromium

Etching

Dry etching

Scanning electron microscopy

Photomasks

Modulation

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